为提高光测设备在空间目标测量过程的自动化程度，提出了一种自动化测量方法。介绍了系统组成及其自动化运行流程。以观测目标数最大化及观测时长可用于编目为准则，设计待优化函数，采用粒子群优化算法对观测计划进行编排。针对轨道预报数据误差较大时目标在视场外无法识别的问题，给出两种主动搜索策略。仿真计算表明，经过优化后的观测计划，解决了弧段重叠导致个别目标无法观测的问题，同时自动完成了对各目标观测时长的合理控制。对某型号光测设备在螺旋式扫描搜索模式下进行试验，偏移量速度最大值为0.126(°)/s，加速度最大值为-0.053(°)/s2且连续稳定。采用扩张搜索与收缩搜索相结合的方式，不仅提高了目标的捕获概率，而且在结束搜索时可平稳切换到原始引导模式。实测试验表明，该方法可有效提高设备的自动化运行水平及设备的使用效能。

Textured surface boron-doped zinc oxide (BZO) thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide (TCO) for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scanning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96×10³ to 6.94×10³ S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial ptype a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n⁺-type a-Si:H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the opencircuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm². The properties of the solar cells changing with the thickness were also investigated.

利用射频磁控溅射方法在玻璃和聚酰亚胺膜（PI）衬底上沉积了氧化铝质量分数为2%的掺铝氧化锌透明导电薄膜（ZnO∶Al）。系统地研究了不同衬底材料对薄膜的结构、电学以及光学性能的影响。分析表明，衬底材料对薄膜的结晶性和电学性能有较大的影响，对可见光透射率却影响不大。X射线衍射(XRD)分析得出所有的ZnO∶Al具有良好的c轴择优取向性，在可见光区(400～800 nm)两种衬底上的薄膜都达到了85%的透射率。玻璃衬底上的薄膜呈现出更强的（002）衍射峰及相对更小的半峰全宽（FWHM），薄膜电阻率达到了2.352×10-4 Ω·cm。电镜分析表明，相对于PI上的ZnO∶Al膜，玻璃上ZnO∶Al膜表面有更致密的微观结构及更大的晶粒尺寸。PI衬底上的ZnO∶Al膜也有相对较好的电、光学性能，其中电阻率达到了6.336×10-4 Ω·cm，而且由于PI衬底柔性可弯曲，使得它适于在柔性太阳电池和柔性液晶显示中做窗口层材料及透明导电电极。玻璃上的ZnO∶Al膜则可应用在平板显示和太阳电池技术中。

阐述了当前硅量子点(QDs)太阳电池的发展概况。介绍了量子限制效应引起的碰撞电离和多激子产生现象,分析了硅量子点太阳电池设计理论。同时介绍了硅量子点当前几种制作工艺,详细阐述了硅量子点从富硅层中析出工艺。最后,介绍了硅量子点太阳电池的几种结构形式,如叠层结构、PN结构和中间带隙结构。